Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPW60R125P6XKSA1
Part Number | IPW60R125P6XKSA1 |
Datasheet | IPW60R125P6XKSA1 datasheet |
Description | MOSFET N-CH 600V TO247-3 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ P6 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 11.6A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 960µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2660pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 219W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |