Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPU80R1K4CEAKMA1
Part Number | IPU80R1K4CEAKMA1 |
Datasheet | IPU80R1K4CEAKMA1 datasheet |
Description | MOSFET N-CH 800V TO251-3 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 2.3A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 240µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO251-3 |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |