Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / EPC2016C
Product Introduction
EPC2016C
- Part Number
- EPC2016C
- Manufacturer/Brand
- EPC
- Description
- GANFET TRANS 100V 18A BUMPED DIE
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- eGaN®
- Quantity
- 397688pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | EPC2016C |
| Datasheet | EPC2016C datasheet |
| Description | GANFET TRANS 100V 18A BUMPED DIE |
| Manufacturer | EPC |
| Series | eGaN® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 11A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 5V |
| Vgs (Max) | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
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