Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / GA10JT12-247

Product Introduction

GA10JT12-247

Part Number
GA10JT12-247
Manufacturer/Brand
GeneSiC Semiconductor
Description
TRANS SJT 1.2KV 10A
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
1501pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number GA10JT12-247
Description TRANS SJT 1.2KV 10A
Manufacturer GeneSiC Semiconductor
Series -
Part Status Obsolete
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 140 mOhm @ 10A
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 170W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AB
Package / Case TO-247-3

Latest Products for Transistors - FETs, MOSFETs - Single

IAUT150N10S5N035ATMA1

Infineon Technologies

100V 150A 3.5MOHM TOLL

IAUT165N08S5N029ATMA2

Infineon Technologies

MOSFET N-CH 165A 80V 120V 8HSOF

IAUT200N08S5N023ATMA1

Infineon Technologies

80V 200A 2.3MOHM TOLL

IAUT240N08S5N019ATMA1

Infineon Technologies

MOSFET N-CH 75V 8HSOF

IAUT260N10S5N019ATMA1

Infineon Technologies

MOSFET75V120V

IAUT300N08S5N012ATMA2

Infineon Technologies

MOSFET N-CH 75V 120V 8HSOF