Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIB412DK-T1-E3
Part Number | SIB412DK-T1-E3 |
Datasheet | SIB412DK-T1-E3 datasheet |
Description | MOSFET N-CH 20V 9A SC75-6 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 34 mOhm @ 6.6A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10.16nC @ 5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 535pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SC-75-6L Single |
Package / Case | PowerPAK® SC-75-6L |