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| Part Number | SIB412DK-T1-E3 | 
| Datasheet | SIB412DK-T1-E3 datasheet | 
| Description | MOSFET N-CH 20V 9A SC75-6 | 
| Manufacturer | Vishay Siliconix | 
| Series | TrenchFET® | 
| Part Status | Obsolete | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 20V | 
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | 
| Rds On (Max) @ Id, Vgs | 34 mOhm @ 6.6A, 4.5V | 
| Vgs(th) (Max) @ Id | 1V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 10.16nC @ 5V | 
| Vgs (Max) | ±8V | 
| Input Capacitance (Ciss) (Max) @ Vds | 535pF @ 10V | 
| FET Feature | - | 
| Power Dissipation (Max) | 2.4W (Ta), 13W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | PowerPAK® SC-75-6L Single | 
| Package / Case | PowerPAK® SC-75-6L |