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Part Number | HS8K11TB |
Datasheet | HS8K11TB datasheet |
Description | MOSFET 2N-CH 30V 7A/11A HSML |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 7A, 11A |
Rds On (Max) @ Id, Vgs | 17.9 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 11.1nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 15V |
Power - Max | 2W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-UDFN Exposed Pad |
Supplier Device Package | HSML3030L10 |