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| Part Number | IPP65R110CFDAAKSA1 | 
| Datasheet | IPP65R110CFDAAKSA1 datasheet | 
| Description | MOSFET N-CH 650V TO-220-3 | 
| Manufacturer | Infineon Technologies | 
| Series | Automotive, AEC-Q101, CoolMOS™ | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 650V | 
| Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.7A, 10V | 
| Vgs(th) (Max) @ Id | 4.5V @ 1.3mA | 
| Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 3240pF @ 100V | 
| FET Feature | - | 
| Power Dissipation (Max) | 277.8W (Tc) | 
| Operating Temperature | -40°C ~ 150°C (TJ) | 
| Mounting Type | Through Hole | 
| Supplier Device Package | PG-TO220-3 | 
| Package / Case | TO-220-3 |