Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPP65R110CFDAAKSA1
Part Number | IPP65R110CFDAAKSA1 |
Datasheet | IPP65R110CFDAAKSA1 datasheet |
Description | MOSFET N-CH 650V TO-220-3 |
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, CoolMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 31.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.7A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 1.3mA |
Gate Charge (Qg) (Max) @ Vgs | 118nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3240pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 277.8W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |