Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIDR402DP-T1-GE3
Part Number | SIDR402DP-T1-GE3 |
Datasheet | SIDR402DP-T1-GE3 datasheet |
Description | MOSFET N-CHAN 40V PPSO-8DC |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen IV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 64.6A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 0.88 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 165nC @ 10V |
Vgs (Max) | +20V, -16V |
Input Capacitance (Ciss) (Max) @ Vds | 9100pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 6.25W (Ta), 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SO-8DC |
Package / Case | PowerPAK® SO-8 |