Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STB11NM60FDT4
Part Number | STB11NM60FDT4 |
Datasheet | STB11NM60FDT4 datasheet |
Description | MOSFET N-CH 600V 11A D2PAK |
Manufacturer | STMicroelectronics |
Series | FDmesh™ |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 160W (Tc) |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |