Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PMG45UN,115
Part Number | PMG45UN,115 |
Datasheet | PMG45UN,115 datasheet |
Description | MOSFET N-CH 20V 3A SOT363 |
Manufacturer | NXP USA Inc. |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 3.3nC @ 4.5V |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | 184pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 375mW (Ta), 4.35W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSSOP |
Package / Case | 6-TSSOP, SC-88, SOT-363 |