Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / CSD25304W1015
Part Number | CSD25304W1015 |
Description | MOSFET P-CH 20V 3A 6DSBGA |
Manufacturer | Texas Instruments |
Series | NexFET™ |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs | 32.5 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.15V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.4nC @ 4.5V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 595pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 750mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-DSBGA |
Package / Case | 6-UFBGA, DSBGA |