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Product Introduction

SIDR622DP-T1-GE3

Part Number
SIDR622DP-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CHAN 150V
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
8087pcs Stock Available.

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Product Specifications

Part Number SIDR622DP-T1-GE3
Datasheet SIDR622DP-T1-GE3 datasheet
Description MOSFET N-CHAN 150V
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 64.6A (Ta), 56.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 17.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1516pF @ 75V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8

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