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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK20P04M1,RQ(S
Part Number | TK20P04M1,RQ(S |
Datasheet | TK20P04M1,RQ(S datasheet |
Description | MOSFET N-CH 40V 20A DPAK-3 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVI-H |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 29 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 985pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 27W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |