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Product Introduction

IPD60R3K4CEAUMA1

Part Number
IPD60R3K4CEAUMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 650V 2.6A TO252-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
696pcs Stock Available.

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Product Specifications

Part Number IPD60R3K4CEAUMA1
Datasheet IPD60R3K4CEAUMA1 datasheet
Description MOSFET N-CH 650V 2.6A TO252-3
Manufacturer Infineon Technologies
Series -
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 93pF @ 100V
FET Feature -
Power Dissipation (Max) 29W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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