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Product Introduction
IPC26N12NX1SA1
- Part Number
- IPC26N12NX1SA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH 120V 1A SAWN ON FOIL
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- OptiMOS™
- Quantity
- 729pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IPC26N12NX1SA1 |
| Description | MOSFET N-CH 120V 1A SAWN ON FOIL |
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 244µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Sawn on foil |
| Package / Case | Die |
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