Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI5999EDU-T1-GE3
Part Number | SI5999EDU-T1-GE3 |
Datasheet | SI5999EDU-T1-GE3 datasheet |
Description | MOSFET 2P-CH 20V 6A POWERPAK |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A |
Rds On (Max) @ Id, Vgs | 59 mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 496pF @ 10V |
Power - Max | 10.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® ChipFET™ Dual |
Supplier Device Package | PowerPAK® ChipFet Dual |