Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIA777EDJ-T1-GE3
Part Number | SIA777EDJ-T1-GE3 |
Datasheet | SIA777EDJ-T1-GE3 datasheet |
Description | MOSFET N/P-CH 20V/12V SC70-6L |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V, 12V |
Current - Continuous Drain (Id) @ 25°C | 1.5A, 4.5A |
Rds On (Max) @ Id, Vgs | 225 mOhm @ 1.6A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 5W, 7.8W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® SC-70-6 Dual |
Supplier Device Package | PowerPAK® SC-70-6 Dual |