Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / ALD212900ASAL
Part Number | ALD212900ASAL |
Datasheet | ALD212900ASAL datasheet |
Description | MOSFET 2N-CH 10.6V 0.08A 8SOIC |
Manufacturer | Advanced Linear Devices Inc. |
Series | EPAD®, Zero Threshold™ |
Part Status | Active |
FET Type | 2 N-Channel (Dual) Matched Pair |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 10.6V |
Current - Continuous Drain (Id) @ 25°C | 80mA |
Rds On (Max) @ Id, Vgs | 14 Ohm |
Vgs(th) (Max) @ Id | 10mV @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 5V |
Power - Max | 500mW |
Operating Temperature | 0°C ~ 70°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOIC |