Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD60R600E6ATMA1
Product Introduction
IPD60R600E6ATMA1
- Part Number
- IPD60R600E6ATMA1
- Manufacturer/Brand
- Infineon Technologies
- Description
- MOSFET N-CH 600V 7.3A TO252
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- CoolMOS™ E6
- Quantity
- 5364pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | IPD60R600E6ATMA1 |
| Datasheet | IPD60R600E6ATMA1 datasheet |
| Description | MOSFET N-CH 600V 7.3A TO252 |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ E6 |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 20.5nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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