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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQM120N06-06_GE3
Part Number | SQM120N06-06_GE3 |
Datasheet | SQM120N06-06_GE3 datasheet |
Description | MOSFET N-CH 60V 120A TO263 |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6495pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 230W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (D²Pak) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |