Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK4A60D(STA4,Q,M)

Product Introduction

TK4A60D(STA4,Q,M)

Part Number
TK4A60D(STA4,Q,M)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 600V 4A TO-220SIS
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
π-MOSVII
Quantity
2908pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number TK4A60D(STA4,Q,M)
Datasheet TK4A60D(STA4,Q,M) datasheet
Description MOSFET N-CH 600V 4A TO-220SIS
Manufacturer Toshiba Semiconductor and Storage
Series π-MOSVII
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack

Latest Products for Transistors - FETs, MOSFETs - Single

TPH3206LDB

Transphorm

GANFET N-CH 650V 16A PQFN

TPH3206LD

Transphorm

GANFET N-CH 600V 17A PQFN

TPH3202LD

Transphorm

GANFET N-CH 600V 9A PQFN

TPH3208LD

Transphorm

GANFET N-CH 650V 20A PQFN

TPH3206LS

Transphorm

GANFET N-CH 600V 17A PQFN

TPH3208LS

Transphorm

GANFET N-CH 650V 20A PQFN