Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2105

Product Introduction

EPC2105

Part Number
EPC2105
Manufacturer/Brand
EPC
Description
GAN TRANS ASYMMETRICAL HALF BRID
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
eGaN®
Quantity
9183pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number EPC2105
Description GAN TRANS ASYMMETRICAL HALF BRID
Manufacturer EPC
Series eGaN®
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 2.5mA, 2.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V, 10nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V, 1100pF @ 40V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Latest Products for Transistors - FETs, MOSFETs - Arrays

IPG20N06S4L14ATMA2

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N10S4L22ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N10S4L35ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

FF23MR12W1M1B11BOMA1

Infineon Technologies

MOSFET 2 N-CH 1200V 50A MODULE

FF11MR12W1M1B11BOMA1

Infineon Technologies

MOSFET 2 N-CH 1200V 100A MODULE

BSC150N03LDGATMA1

Infineon Technologies

MOSFET 2N-CH 30V 8A 8TDSON