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Product Introduction

IPG20N10S4L22ATMA1

Part Number
IPG20N10S4L22ATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET 2N-CH 8TDSON
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
Automotive, AEC-Q101, OptiMOS™
Quantity
9363pcs Stock Available.

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Product Specifications

Part Number IPG20N10S4L22ATMA1
Datasheet IPG20N10S4L22ATMA1 datasheet
Description MOSFET 2N-CH 8TDSON
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 22 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1755pF @ 25V
Power - Max 60W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4

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