Product Introduction
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Product Specifications
Part Number |
US6K4TR |
Datasheet |
US6K4TR datasheet |
Description |
MOSFET 2N-CH 20V 1.5A TUMT6 |
Manufacturer |
Rohm Semiconductor |
Series |
- |
Part Status |
Active |
FET Type |
2 N-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
1.5A |
Rds On (Max) @ Id, Vgs |
180 mOhm @ 1.5A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
110pF @ 10V |
Power - Max |
1W |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
6-SMD, Flat Leads |
Supplier Device Package |
TUMT6 |
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