Product Introduction
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See Product Specifications
Product Specifications
| Part Number |
US6K4TR |
| Datasheet |
US6K4TR datasheet |
| Description |
MOSFET 2N-CH 20V 1.5A TUMT6 |
| Manufacturer |
Rohm Semiconductor |
| Series |
- |
| Part Status |
Active |
| FET Type |
2 N-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
1.5A |
| Rds On (Max) @ Id, Vgs |
180 mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id |
1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
2.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
110pF @ 10V |
| Power - Max |
1W |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
6-SMD, Flat Leads |
| Supplier Device Package |
TUMT6 |
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