Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFBE30

Product Introduction

IRFBE30

Part Number
IRFBE30
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 800V 4.1A TO-220AB
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
3041pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IRFBE30
Description MOSFET N-CH 800V 4.1A TO-220AB
Manufacturer Vishay Siliconix
Series -
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

Latest Products for Transistors - FETs, MOSFETs - Single

IRF840LCPBF

Vishay Siliconix

MOSFET N-CH 500V 8A TO-220AB

IRF634PBF

Vishay Siliconix

MOSFET N-CH 250V 8.1A TO-220AB

SUP70060E-GE3

Vishay Siliconix

MOSFET N-CH 100V 131A TO-220

SIHP12N50C-E3

Vishay Siliconix

MOSFET N-CH 500V 12A TO-220AB

IRF9Z34PBF

Vishay Siliconix

MOSFET P-CH 60V 18A TO-220AB

IRL640PBF

Vishay Siliconix

MOSFET N-CH 200V 17A TO-220AB