Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / 2SJ661-1E
Part Number | 2SJ661-1E |
Datasheet | 2SJ661-1E datasheet |
Description | MOSFET P-CH 60V 38A |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 38A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 39 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4360pF @ 20V |
FET Feature | - |
Power Dissipation (Max) | 1.65W (Ta), 65W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262-3 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |