Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / PMV35EPER
Part Number | PMV35EPER |
Datasheet | PMV35EPER datasheet |
Description | MOSFET P-CH 30V 5.3A TO236AB |
Manufacturer | Nexperia USA Inc. |
Series | - |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 4.2A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19.2nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 793pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 480mW (Ta), 1.2W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB |
Package / Case | TO-236-3, SC-59, SOT-23-3 |