Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI1912EDH-T1-E3
Part Number | SI1912EDH-T1-E3 |
Datasheet | SI1912EDH-T1-E3 datasheet |
Description | MOSFET 2N-CH 20V 1.13A SC70-6 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.13A |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 1.13A, 4.5V |
Vgs(th) (Max) @ Id | 450mV @ 100µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 570mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-70-6 (SOT-363) |