Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTA2N80
Part Number | IXTA2N80 |
Datasheet | IXTA2N80 datasheet |
Description | MOSFET N-CH 800V 2A TO-263 |
Manufacturer | IXYS |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.2 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 54W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (IXTA) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |