Product Introduction
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Product Specifications
Part Number |
IRF7379 |
Datasheet |
IRF7379 datasheet |
Description |
MOSFET N/P-CH 30V 8-SOIC |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
N and P-Channel |
FET Feature |
Standard |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
5.8A, 4.3A |
Rds On (Max) @ Id, Vgs |
45 mOhm @ 5.8A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
520pF @ 25V |
Power - Max |
2.5W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SO |
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