Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / NP55N055SDG-E1-AY
Part Number | NP55N055SDG-E1-AY |
Datasheet | NP55N055SDG-E1-AY datasheet |
Description | MOSFET N-CH 55V 55A TO-252 |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 28A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.2W (Ta), 77W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252 (MP-3ZK) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |