Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / BSZ0909NDXTMA1
Part Number | BSZ0909NDXTMA1 |
Datasheet | BSZ0909NDXTMA1 datasheet |
Description | MOSFET 2 N-CH 30V 20A WISON-8 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 15V |
Power - Max | 17W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Supplier Device Package | PG-WISON-8 |