Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI1926DL-T1-GE3

Product Introduction

SI1926DL-T1-GE3

Part Number
SI1926DL-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET 2N-CH 60V 0.37A SOT363
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
89pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number SI1926DL-T1-GE3
Datasheet SI1926DL-T1-GE3 datasheet
Description MOSFET 2N-CH 60V 0.37A SOT363
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 370mA
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 18.5pF @ 30V
Power - Max 510mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6 (SOT-363)

Latest Products for Transistors - FETs, MOSFETs - Arrays

DMC25D0UVT-7

Diodes Incorporated

MOSFET N/P-CH 25V/30V TSOT26

SI3585CDV-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 3.9A 6TSOP

DMC25D0UVT-13

Diodes Incorporated

MOSFET N/P-CH 25V/30V TSOT26

DMC2038LVTQ-7

Diodes Incorporated

MOSFET BVDSS 8V 24V TSOT26

IRF5810

Infineon Technologies

MOSFET 2P-CH 20V 2.9A 6TSOP

IRF5810TR

Infineon Technologies

MOSFET 2P-CH 20V 2.9A 6-TSOP