Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / NTMS4N01R2G
Part Number | NTMS4N01R2G |
Datasheet | NTMS4N01R2G datasheet |
Description | MOSFET N-CH 20V 3.3A 8-SOIC |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 4.2A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 4.5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 770mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |