Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD30N03S4L09ATMA1

Product Introduction

IPD30N03S4L09ATMA1

Part Number
IPD30N03S4L09ATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH 30V 30A TO252-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
OptiMOS™
Quantity
85118pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IPD30N03S4L09ATMA1
Datasheet IPD30N03S4L09ATMA1 datasheet
Description MOSFET N-CH 30V 30A TO252-3
Manufacturer Infineon Technologies
Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1520pF @ 15V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

Latest Products for Transistors - FETs, MOSFETs - Single

IXTU01N80

IXYS

MOSFET N-CH 800V 0.1A TO-251

IXTU05N100

IXYS

MOSFET N-CH 1000V 750MA TO-251

IXTU05N120

IXYS

MOSFET N-CH 1200V 0.5A TO-251

IXTU06N120P

IXYS

MOSFET N-CH 1200V 0.6A TO-251

IXTU08N100P

IXYS

MOSFET N-CH 1000V 8A TO-251

IXTU12N06T

IXYS

MOSFET N-CH 60V 12A TO-251

Related Products