Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI2316BDS-T1-GE3
Part Number | SI2316BDS-T1-GE3 |
Datasheet | SI2316BDS-T1-GE3 datasheet |
Description | MOSFET N-CH 30V 4.5A SOT23-3 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 3.9A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta), 1.66W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |