Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXFA3N120
Part Number | IXFA3N120 |
Datasheet | IXFA3N120 datasheet |
Description | MOSFET N-CH 1200V 3A TO-263 |
Manufacturer | IXYS |
Series | HiPerFET™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1200V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.5 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1050pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (IXFA) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |