Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / BSO211PNTMA1
Part Number | BSO211PNTMA1 |
Datasheet | BSO211PNTMA1 datasheet |
Description | MOSFET 2P-CH 20V 4.7A 8SOIC |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Obsolete |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4.7A |
Rds On (Max) @ Id, Vgs | 67 mOhm @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 23.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 15V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | P-DSO-8 |