Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / PMDT290UCE,115
Part Number | PMDT290UCE,115 |
Datasheet | PMDT290UCE,115 datasheet |
Description | MOSFET N/P-CH 20V SOT666 |
Manufacturer | Nexperia USA Inc. |
Series | Automotive, AEC-Q101, TrenchMOS™ |
Part Status | Active |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 800mA, 550mA |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
Power - Max | 500mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-666 |