Product Introduction
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Product Specifications
Part Number |
BSP613P |
Datasheet |
BSP613P datasheet |
Description |
MOSFET P-CH 60V 2.9A SOT-223 |
Manufacturer |
Infineon Technologies |
Series |
SIPMOS® |
Part Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
2.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
130 mOhm @ 2.9A, 10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
33nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
875pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
1.8W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PG-SOT223-4 |
Package / Case |
TO-261-4, TO-261AA |
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