
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQI27P06TU
Part Number | FQI27P06TU |
Datasheet | FQI27P06TU datasheet |
Description | MOSFET P-CH 60V 27A I2PAK |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 13.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Vgs (Max) | ±25V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |