Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SH8M4TB1
Part Number | SH8M4TB1 |
Datasheet | SH8M4TB1 datasheet |
Description | MOSFET N/P-CH 30V 9A/7A 8SOIC |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Not For New Designs |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9A, 7A |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 10V |
Power - Max | 2W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SOP |