Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / PMWD19UN,518
Product Introduction
PMWD19UN,518
- Part Number
- PMWD19UN,518
- Manufacturer/Brand
- NXP USA Inc.
- Description
- MOSFET 2N-CH 30V 5.6A 8TSSOP
- Category
- Transistors - FETs, MOSFETs - Arrays
- RoHs Status
- Lead free / RoHS Compliant
- Series
- TrenchMOS™
- Quantity
- 9956pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | PMWD19UN,518 |
| Datasheet | PMWD19UN,518 datasheet |
| Description | MOSFET 2N-CH 30V 5.6A 8TSSOP |
| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.6A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 3.5A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1478pF @ 10V |
| Power - Max | 2.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package | 8-TSSOP |
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