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Part Number | PMWD26UN,518 |
Datasheet | PMWD26UN,518 datasheet |
Description | MOSFET 2N-CH 20V 7.8A 8TSSOP |
Manufacturer | NXP USA Inc. |
Series | TrenchMOS™ |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 7.8A |
Rds On (Max) @ Id, Vgs | 30 mOhm @ 3.5A, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 23.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1366pF @ 16V |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |