Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB60R160P6ATMA1

Product Introduction

IPB60R160P6ATMA1

Part Number
IPB60R160P6ATMA1
Manufacturer/Brand
Infineon Technologies
Description
MOSFET N-CH TO263-3
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
CoolMOS™ P6
Quantity
9258pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IPB60R160P6ATMA1
Description MOSFET N-CH TO263-3
Manufacturer Infineon Technologies
Series CoolMOS™ P6
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 100V
FET Feature -
Power Dissipation (Max) 176W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Latest Products for Transistors - FETs, MOSFETs - Single

IPB075N04LGATMA1

Infineon Technologies

MOSFET N-CH 40V 50A TO263-3

IPB080N06N G

Infineon Technologies

MOSFET N-CH 60V 80A TO-263

IPB083N10N3GATMA1

Infineon Technologies

MOSFET N-CH 100V 80A TO263-3

IPB083N15N5LFATMA1

Infineon Technologies

MOSFET N-CH 150V 105A TO263-3

IPB085N06L G

Infineon Technologies

MOSFET N-CH 60V 80A TO-263

IPB08CN10N G

Infineon Technologies

MOSFET N-CH 100V 95A TO263-3