Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SPI11N60C3HKSA1
Part Number | SPI11N60C3HKSA1 |
Datasheet | SPI11N60C3HKSA1 datasheet |
Description | MOSFET N-CH 600V 11A TO-262 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |