Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI4286DY-T1-GE3
Part Number | SI4286DY-T1-GE3 |
Datasheet | SI4286DY-T1-GE3 datasheet |
Description | MOSFET 2N-CH 40V 7A 8SO |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 7A |
Rds On (Max) @ Id, Vgs | 32.5 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 375pF @ 20V |
Power - Max | 2.9W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |