Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI7212DN-T1-E3
Part Number | SI7212DN-T1-E3 |
Datasheet | SI7212DN-T1-E3 datasheet |
Description | MOSFET 2N-CH 30V 4.9A 1212-8 |
Manufacturer | Vishay Siliconix |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4.9A |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 6.8A, 10V |
Vgs(th) (Max) @ Id | 1.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.3W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8 Dual |
Supplier Device Package | PowerPAK® 1212-8 Dual |