Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / PMGD780SN,115
Part Number | PMGD780SN,115 |
Datasheet | PMGD780SN,115 datasheet |
Description | MOSFET 2N-CH 60V 0.49A 6TSSOP |
Manufacturer | Nexperia USA Inc. |
Series | TrenchMOS™ |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 490mA |
Rds On (Max) @ Id, Vgs | 920 mOhm @ 300mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1.05nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 23pF @ 30V |
Power - Max | 410mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | 6-TSSOP |