Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / BSM180D12P2C101
Part Number | BSM180D12P2C101 |
Datasheet | BSM180D12P2C101 datasheet |
Description | MOSFET 2N-CH 1200V 180A MODULE |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 204A (Tc) |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 4V @ 35.2mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
Power - Max | 1130W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | - |
Package / Case | Module |
Supplier Device Package | Module |